Enda Toshiyuki | ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan

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• 同名の論文著者
• ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japanの論文著者

ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan | 論文

• Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope

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