Preobrazhenskii Valerii | Institute of Semiconductor Physics, Acad. Lavrentyev Ave. 13, 630090 Novosibirsk, Russia
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- Preobrazhenskii Valeriiの詳細を見る
- 同名の論文著者
- Institute of Semiconductor Physics, Acad. Lavrentyev Ave. 13, 630090 Novosibirsk, Russiaの論文著者
Institute of Semiconductor Physics, Acad. Lavrentyev Ave. 13, 630090 Novosibirsk, Russia | 論文
- Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
- Free-Standing InAs/InGaAs Microtubes and Microspirals on InAs (100)