Harame David | IBM Microelectronics, Essex Junction, VT, USA

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著作論文

50-200 GHz Silicon-Germanium Heterojunction Bipolar Transistor BICMOS Technology and a Computer-Aided Design Environment for 2-50+ GHz Very Large-Scale Integration Mixed-Signal ICs : Review Paper
50–200 GHz Silicon–Germanium Heterojunction Bipolar Transistor BICMOS Technology and a Computer-Aided Design Environment for $2\text{--}50+$ GHz Very Large-Scale Integration Mixed-Signal ICs

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