Tokumitsu Eisuke | Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

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Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan | 論文

• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

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