Park Bongmo | R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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- 同名の論文著者
- R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Koreaの論文著者
R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea | 論文
- Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes
- Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes