Iwasaki Takahiro | Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japanの論文著者
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan | 論文
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
- Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy