Akasaki Isamu | Department of Materials Science and Engineering, Meijo University, Nagoya 468-0073, Japan
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- Department of Materials Science and Engineering, Meijo University, Nagoya 468-0073, Japanの論文著者
Department of Materials Science and Engineering, Meijo University, Nagoya 468-0073, Japan | 論文
- Metal--Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density
- Metal-Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density (Special Issue : Recent Advances in Nitride Semiconductors)