Zhang Changchun | Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, China
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- Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, Chinaの論文著者
Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, China | 論文
- Novel Silicon-on-Insulator Lateral Power Device with Partial Oxide Pillars in the Drift Region
- Novel Bulk Silicon Lateral Double-Diffused Metal--Oxide--Semiconductor Field-Effect Transistors Using Step Thickness Technology in Drift Region