Yamashita Hiroki | Hiroshima University, Research Center for Nanodevices and Systems, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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- Hiroshima University, Research Center for Nanodevices and Systems, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japanの論文著者
Hiroshima University, Research Center for Nanodevices and Systems, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan | 論文
- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
- A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications