Kato Yoshihisa | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan
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- 同名の論文著者
- Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japanの論文著者
Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka 569-1193, Japan | 論文
- Overview and Future Challenge of Ferroelectric Random Access Memory Technologies
- A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection
- Electron Backscatter Diffraction Analysis for Polarization of SrBi2(Ta,Nb)2O9 Ferroelectric Capacitors in Submicron Small Area