Yoshiaki Asao | Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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• Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者

Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文

• Effect of Self-Heating on Time-Dependent Dielectric Breakdown in Ultrathin MgO Magnetic Tunnel Junctions for Spin Torque Transfer Switching Magnetic Random Access Memory

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