Miyata Toshihiro | Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan | 論文
- High-Efficiency Cu₂O-Based Heterojunction Solar Cells Fabricated Using a Ga₂O₃ Thin Film as N-Type Layer
- GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy through Nanometer-Size Channels Fabricated with Nanoimprint Lithography
- Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates