Yoshida Makoto | Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea

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• Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Koreaの論文著者

Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea | 論文

• Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor

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