Nakamoto Masayuki | Department of Physical Electronics, Graduate School of science and Engineering, Tokyo Institute of Technology
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概要
- 同名の論文著者
- Department of Physical Electronics, Graduate School of science and Engineering, Tokyo Institute of Technologyの論文著者
Department of Physical Electronics, Graduate School of science and Engineering, Tokyo Institute of Technology | 論文
- Topology and Design Considerations of 60 GHz CMOS LNAs for Noise Performance Improving
- A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors
- Evaluation of L-2L De-Embedding Method Considering Misalignment of Contact Position for Millimeter-Wave CMOS Circuit Design
- A 24dB Gain 51-68GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors
- Morphological Evidence of Chirality in Poly (diacetylene) Film Prepared Using Circularly Polarized Light