Choi Chang-Sik | LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea

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• LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Koreaの論文著者

LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea | 論文

• Degradation Phenomenon of p+ to p+ Isolation Characteristics Caused by Carrier Injection in a High-Voltage Process

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