ISHIHARA Yoshiyuki | Department of Electronic Engineering, Kohgakuin University

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概要

• 同名の論文著者
• Department of Electronic Engineering, Kohgakuin Universityの論文著者

Department of Electronic Engineering, Kohgakuin University | 論文

• Band-Gap Energy and Effecive Mass of BGaN
• Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy
• Tensile Strain Introduced in AlN Layer Grown by Metal-Organic Vapor-Phase Epitaxy on (0001) 6H-SiC with (GaN/AlN) Buffer
• Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy
• Measurement of Effective Refractive Index of GaInAsP Grown on (100) GaAs by LPE

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