Lefebvre P. | Groupe d'Etude des Semiconducteurs-CNRS, Université Montpellier II, Case Courrier 074, F-34095 Montpellier Cedex 5, France

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概要

関連著者

Perlin P.
TopGaN Ltd., Sokoŀowska 29/37, 01-142 Warsaw, Poland
Suski T.
Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokoŀowska 29/37, 01-142 Warsaw, Poland
Grzegory I.
TopGaN Ltd., Sokoŀowska 29/37, 01-142 Warsaw, Poland
Czernecki R.
TopGaN Ltd., Sokoŀowska 29/37, 01-142 Warsaw, Poland
Franssen G.
Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokoŀowska 29/37, 01-142 Warsaw, Poland
Świetlik T.
Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokoŀowska 29/37, 01-142 Warsaw, Poland
Borysiuk J.
Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokoŀowska 29/37, 01-142 Warsaw, Poland
Grzanka S.
TopGaN Ltd., Sokoŀowska 29/37, 01-142 Warsaw, Poland
Lefebvre P.
Groupe d'Etude des Semiconducteurs-CNRS, Université Montpellier II, Case Courrier 074, F-34095 Montpellier Cedex 5, France
Leszczyński M.
TopGaN Ltd., Sokoŀowska 29/37, 01-142 Warsaw, Poland
Porowski S.
Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokoŀowska 29/37, 01-142 Warsaw, Poland
Grzanka S.
TopGaN Ltd., Sokoŀowska 29/37, 01-142 Warsaw, Poland
Franssen G.
Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokoŀowska 29/37, 01-142 Warsaw, Poland
Porowski S.
Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokoŀowska 29/37, 01-142 Warsaw, Poland
Lefebvre P.
Groupe d'Etude des Semiconducteurs-CNRS, Université Montpellier II, Case Courrier 074, F-34095 Montpellier Cedex 5, France
Borysiuk J.
Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokoŀowska 29/37, 01-142 Warsaw, Poland
Czernecki R.
TopGaN Ltd., Sokoŀowska 29/37, 01-142 Warsaw, Poland

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著作論文

Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals

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