Tomoko Ojima | Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
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- Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japanの論文著者
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan | 論文
- Resist Residue in Ion Implantation Level Lithography
- Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
- Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor
- Potential Characterization of Interconnect Corrosion by Kelvin Probe and Electrostatic Force Microscopies