Li Bin | Institute of Microelectronics, South China University of Technology, Guangzhou 510640, China
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- Institute of Microelectronics, South China University of Technology, Guangzhou 510640, Chinaの論文著者
Institute of Microelectronics, South China University of Technology, Guangzhou 510640, China | 論文
- A Physical Model with the Effects of Self-Heating and Variable Resistance in Above-Threshold Region for Hydrogenated Amorphous Silicon Thin Film Transistor
- Leakage Current Model of Polycrystalline Silicon Thin-Film Transistors for Device Characterization and Circuit Simulation