CLEAVER John | Microelectronics Research Center, Cavendish Laboratory
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概要
Microelectronics Research Center, Cavendish Laboratory | 論文
- Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile
- Modelling of Structural and Threshold Voltage Characteristics of Randomly Doped Silicon Nanowires in the Coulomb-Blockade Regime : Semiconductors