Yon Guk-Hyon | Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Korea

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• Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Koreaの論文著者

Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Korea | 論文

• Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

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