MURATA Kazumi | Department of Applied Electronics, Hokkaido Institute of Technology
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Department of Applied Electronics, Hokkaido Institute of Technology | 論文
- Electrical Properties of Regrowth ZnSe Homointerfaces Formed by Molecular Beam Epitaxy
- Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process
- Characterization of Epitaxial ZnSe/GaAs(100) Interface Properties and Their Control by (HF+Se)-Pretreatment
- Characterization and Control of MBE-ZnSe/GaAs(100) Substrate Interface and Regrown ZnSe/ZnSe Homointerface
- Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System