Park Hokyung | Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong, Puk-gu, Gwangju 500-712, Korea

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• Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong, Puk-gu, Gwangju 500-712, Koreaの論文著者

Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong, Puk-gu, Gwangju 500-712, Korea | 論文

• Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability

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