Anda Yoshiharu | Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
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- Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japanの論文著者
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan | 論文
- 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
- Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors