Park Joo-Seog | Memory R&D Division, Hynix Semiconductor Inc., 1 Hyangjeong-dong, Heungduk-gu, Cheongju, Chungbuk 361-725, Korea

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• Memory R&D Division, Hynix Semiconductor Inc., 1 Hyangjeong-dong, Heungduk-gu, Cheongju, Chungbuk 361-725, Koreaの論文著者

Memory R&D Division, Hynix Semiconductor Inc., 1 Hyangjeong-dong, Heungduk-gu, Cheongju, Chungbuk 361-725, Korea | 論文

• Impact of Ti Deposition and Subsequent RTA Process on Contact Resistivity Characteristics of W-Bit Line in Sub-Micron Dynamic Random Access Memory

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