Choi Sang | Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

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概要

関連著者

Shin Hyun-joon
Pohang Accelerator Laboratory
Kim Kihong
AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
Park Ju
Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
Jung M.-C.
Priority Research Center Program, University of Ulsan, Ulsan 680-749, Republic of Korea
Choi Sang
Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
Choi Sang
Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

著作論文

Synchrotron-Based X-ray Spectroscopic Investigation of Nitrogen-Doped Ge–Bi (8.4 at. %)–Te Thin Films during the Amorphous-to-Crystalline Structural Phase Transition

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