Oshima Takayoshi | Department of Electronic Science and Engineering, Kyoto University
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概要
Department of Electronic Science and Engineering, Kyoto University | 論文
- Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
- Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
- Immuno-Gold Localization of Nitrogenase in Root Nodules of Elaeagnus pungens Thunb
- ISOLATION OF Frankia STRAINS FROM ROOT NODULES OF Myrica rubra
- A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching