NAKAGAWA Kyosuke | Nitride Semiconductor Research Laboratory, Nichia Corporation
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概要
Nitride Semiconductor Research Laboratory, Nichia Corporation | 論文
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
- 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
- Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
- Wavelength Dependence of InGaN Laser Diode Characteristics