KAWANISHI Hideo | Department of Electronic Engineering, Kohgakuin University
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概要
Department of Electronic Engineering, Kohgakuin University | 論文
- Band-Gap Energy and Effecive Mass of BGaN
- Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy
- Tensile Strain Introduced in AlN Layer Grown by Metal-Organic Vapor-Phase Epitaxy on (0001) 6H-SiC with (GaN/AlN) Buffer
- Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy
- Measurement of Effective Refractive Index of GaInAsP Grown on (100) GaAs by LPE