Hisayuki Nakanishi | Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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- Nakanishi Hisayukiの詳細を見る
- 同名の論文著者
- Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japanの論文著者
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan | 論文
- Shear-Mode Piezoelectric Properties of KNbO3-Based Ferroelectric Ceramics
- Fabrication and Piezoelectric Properties of Textured (Bi1/2K1/2)TiO3 Ferroelectric Ceramics
- Growth of Cu(In,Al)(S,Se)2 thin films by selenization and sulfurization for a wide bandgap absorber (Special issue: Ternary and multinary compounds)
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Preparation of SnS Films by Sulfurization of Sn Sheet