IWATA Shiro | Institute for Nuclear Study, University of Tokyo:Engineering Research Institute, Kyoto University
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概要
- 同名の論文著者
- Institute for Nuclear Study, University of Tokyo:Engineering Research Institute, Kyoto Universityの論文著者
論文 | ランダム
- High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique
- Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs
- Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method
- Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures