TSUCHIYA Norihiko | Toshiba Corp., Semiconductor Materials Engineering Dept.

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Toshiba Corp., Semiconductor Materials Engineering Dept. | 論文

• Dependence of Time Dependent Dielectric Breakdown Characteristics on Mechanism for Silicon Epitaxial Growth on Misoriented Czochralski Silicon Crystal
• Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition

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