Sakai Shigeki | National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japanの論文著者
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Laser-Triggered Spark Gap for High-Energy KrF Laser Amplifiers
- Comparison between a 1-V NbN-Based Programmable and a Conventional Josephson Array
- Evaluation of Attenuation Constants of Superconducting NbN Coplanar Waveguides
- Carbon Nanotube Fabry–Perot Device for Detection of Multiple Single Charge Transitions