Matz L. | Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.
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- Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A.の論文著者
Silicon Technology Development, Texas Instruments Inc., 13560 N. Central Expressway, MS-3736, Dallas, TX 75243, U.S.A. | 論文
- Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic
- Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process