HUANG S. | Physics Division, Institution of Nuclear Energy Research
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概要
Physics Division, Institution of Nuclear Energy Research | 論文
- In-Situ Fluorinated Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF_4 Plasma
- Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)