Wang Shou-Qi | Electrnics Device R&D Center, Mitsubishi Material Co., Ltd.,
スポンサーリンク
概要
関連著者
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Uda Satoshi
Electrnics Device R&d Center Mitsubishi Material Co. Ltd.
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Wang Shou-Qi
Electrnics Device R&D Center, Mitsubishi Material Co., Ltd.,
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Wang Shou-qi
Electronics Device R & D Center Mitsubishi Material Co. Ltd.
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Harada Jiro
Electrnics Device R&d Center Mitsubishi Material Co. Ltd.
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Hasegawa Koji
Department of Cardiovascular Medicine, Graduate School of Medicine, Kyoto University
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Yamaguchi Kunio
Electronics Technology Research Center Mitsubishi Materials Co. Ltd.
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Hasegawa Koji
Department Of Cardiovascular Medicine Graduate School Of Medicine Kyoto University
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Wang S‐q
Electronics Device R&d Center Mitsubishi Materials Corporation
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Harada Jiro
Electronics Device R&d Center Mitsubishi Materials Corporation
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Uda S
Electronics Device R&d Center Mitsubishi Materials Corporation
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Uda Satoshi
Electronics Device R & D Center Mitsubishi Material Co. Ltd.
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KIMURA Ryouhei
Electrnics Device R&D Center, Mitsubishi Material Co., Ltd.,
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Yamaguchi Kunio
Electrnics Device R&d Center Mitsubishi Material Co. Ltd.
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Kimura Ryouhei
Electrnics Device R&d Center Mitsubishi Material Co. Ltd.
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Hasegawa Koji
Department Of Electrical And Electronic Engineering Muroran Institute Of Technology
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Hasegawa Koji
Department Of Biology College Of Liberal Arts Kagoshima University
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Hasegawa Koji
Department Of Applied Chemistry Nagoya Institute Of Technology
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Uda Satoshi
Electronics Device R&D Center, Mitsubishi Materials Corporation, 2270 Yokoze, Chichibu, Saitama 368-8503, Japan
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Wang Shou-Qi
Electronics Device R&D Center, Mitsubishi Materials Corporation, 2270 Yokoze, Chichibu, Saitama 368-8503, Japan
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Wang Shou-Qi
Electronics Device R&D Center, Mitsubishi Material Co., Ltd., 2270-Yokoze, Chichibu, Saitama 368-8503, Japan
著作論文
- Effects of Electrode Materials On Natural Unidirectionality of Langasite
- A Wireless Surface Acoustic Wave Temperature Sensor Using Langasite as Substrate Material for High-Temperature Applications
- Characterization of Homogeneity of Langasite Wafers Using Bulk-Wave Measurement