Nishino Shigehiro | Department of Electronics and Information Science, Kyoto Institute of Technology,

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Department of Electronics and Information Science, Kyoto Institute of Technology, | 論文

• Preparation of Stable F-Doped SiO 2 Thin Films from Si(NCO) 4/SiF 4/O 2 Gas Mixtures Using a Conventional Capacitively Coupled RF Plasma Source

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