NISHIURA Masahide | Corporate R&D Center, Toshiba Corporation
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概要
Corporate R&D Center, Toshiba Corporation | 論文
- Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materia
- V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
- An HPSK/OFDM 64-QAM Dual-Mode Doherty Power Amplifier Module for Mobile Terminals(Active Devices/Circuits,Microwave and Millimeter-Wave Technology)
- A 4-mm-Square Miniaturized Doherty Power Amplifier Module for W-CDMA Mobile Terminals(Analog Circuit Techniques and Related Topics)
- A Proposal for Adopting the Frequency Response of an Envelope Amplifier with Memoryless DPD EER PA Model