Li Jiang | Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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- Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japanの論文著者
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan | 論文
- Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates
- Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors