YANG Bing-Xiong | Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University

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• Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido Universityの論文著者

Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University | 論文

• 0.86eV Platinum Schottky Barrier on Indium Phosphide by In-Situ Electrochemical Process and Its Application to MESFETs

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