FENG Yan | Institute for Microstructural Sciences, National Research Council
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概要
Institute for Microstructural Sciences, National Research Council | 論文
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
- Fractal Behavior in the Magnetoresistance of Chaotic Billiards ( Quantum Dot Structures)