Kim Sung | Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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- 同名の論文著者
- Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Koreaの論文著者
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea | 論文
- Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors
- Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology