Shin-Hyuk Yang | Convergence Components and Material Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Korea
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- Convergence Components and Material Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Koreaの論文著者
Convergence Components and Material Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Korea | 論文
- Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride–trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors
- Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
- Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C61 Butyric Acid Methyl Ester Composite Films
- Luminescence Enhancement by Ga3+ Codoping of BaTiO3:Pr3+ Phosphors