Nabatame Toshihide | MIRAI, Association of Super-Advanced Electronics Technologies, AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan

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• Nabatame Toshihideの詳細を見る
• 同名の論文著者
• MIRAI, Association of Super-Advanced Electronics Technologies, AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japanの論文著者

MIRAI, Association of Super-Advanced Electronics Technologies, AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan | 論文

• Study on Oxynitride Buffer Layers in HfO2 Metal–Insulator–Semiconductor Structures for Improving Metal–Insulator–Semiconductor Field-Effect Transistor Performance

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