Ahn Youngjoon | Device Research Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseo-Dong, Giheung-Gu, Youngin-City, Gyeonggi-Do 449-711, Korea

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• 同名の論文著者
• Device Research Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseo-Dong, Giheung-Gu, Youngin-City, Gyeonggi-Do 449-711, Koreaの論文著者

Device Research Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseo-Dong, Giheung-Gu, Youngin-City, Gyeonggi-Do 449-711, Korea | 論文

• Fin-Type Field-Effect Transistor NAND Flash with Nitride/Silicon Nanocrystal/Nitride Hybrid Trap Layer

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