OKUYAMA Masanori | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University

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• Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka Universityの論文著者

Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University | 論文

• A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_Bi_Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition

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