Shin Kyoungsub | Samsung Electronics, Semiconductor R&D Center, San 16 Banwol-dong, Hwasung, Kyunggi-do 445-701, Republic of Korea
スポンサーリンク
概要
- 同名の論文著者
- Samsung Electronics, Semiconductor R&D Center, San 16 Banwol-dong, Hwasung, Kyunggi-do 445-701, Republic of Koreaの論文著者
関連著者
-
Han Woosung
Samsung Electronics Co. Ltd.
-
Shin Kyoungsub
Samsung Electronics, Semiconductor R&D Center, San 16 Banwol-dong, Hwasung, Kyunggi-do 445-701, Republic of Korea
-
Tokashiki Ken
Samsung Electronics, Semiconductor R&D Center, Banwol-dong, Hwasung, Kyunggi-do 445-701, Republic of Korea
-
Shin Kyoungsub
Samsung Electronics, Semiconductor R&D Center, Banwol-dong, Hwasung, Kyunggi-do 445-701, Republic of Korea
-
Kim Hyun
Conductor Etch Division, Etch Product Business Group, Applied Materials Co., Ltd., 974 E. Arques Avenue, M/S 81517 Sunnyvale, CA 94085, U.S.A.
-
Tokashiki Ken
Samsung Electronics, Semiconductor R&D Center, San 16 Banwol-dong, Hwasung, Kyunggi-do 445-701, Republic of Korea
-
Cho Hong
Samsung Electronics, Semiconductor R&D Center, San 16 Banwol-dong, Hwasung, Kyunggi-do 445-701, Republic of Korea
-
Banna Samer
Conductor Etch Division, Etch Product Business Group, Applied Materials Co., Ltd., 974 E. Arques Avenue, M/S 81517 Sunnyvale, CA 94085, U.S.A.
-
Lee Jeong-Yun
Samsung Electronics, Semiconductor R&D Center, San 16 Banwol-dong, Hwasung, Kyunggi-do 445-701, Republic of Korea
-
Todorow Valentin
Conductor Etch Division, Etch Product Business Group, Applied Materials Co., Ltd., 974 E. Arques Avenue, M/S 81517 Sunnyvale, CA 94085, U.S.A.
著作論文
- Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology
- Mechanism and CHARM2 Evaluation of P-Channel Metal Oxide Semiconductor Threshold Voltage Drop during High Density Plasma Heat-up Process