Itoh Sanae | Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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概要
- Itoh Sanaeの詳細を見る
- 同名の論文著者
- Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者
関連著者
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Aoki Nobutoshi
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toyoshima Yoshiaki
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Izumida Takashi
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Okano Kimitoshi
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kanemura Takahisa
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kondo Masaki
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Inaba Satoshi
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Itoh Sanae
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor
- Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin