HEO Jang-Eun | Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.
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概要
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd. | 論文
- Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes
- Integration of Ferroelectric Random Access Memory Devices with Ir/IrO_2/Pb(Zr_xTi_)O^^_3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr_xTi_)O_3