Satoshi Shimamoto | Micro Device Division, Hitachi, Ltd., 6-16-3 Shinmachi, Ome, Tokyo 198-8512, Japan

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概要

関連著者

Atsushi Hiraiwa
Renesas Technology Corp., 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
Shimamoto Satoshi
Micro Device Division, Hitachi, Ltd., 6-16-3 Shinmachi, Ome, Tokyo 198-8512, Japan
Kawashima Hiroshi
Renesas Technology Corp., 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
Kikuchi Toshiyuki
Micro Device Division, Hitachi, Ltd., 6-16-3 Shinmachi, Ome, Tokyo 198-8512, Japan
Yasuo Yamaguchi
Renesas Technology Corp., 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
Satoshi Shimamoto
Micro Device Division, Hitachi, Ltd., 6-16-3 Shinmachi, Ome, Tokyo 198-8512, Japan
Hiroshi Kawashima
Renesas Technology Corp., 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
Toshiyuki Kikuchi
Micro Device Division, Hitachi, Ltd., 6-16-3 Shinmachi, Ome, Tokyo 198-8512, Japan

著作論文

Atomic Layer Control for Suppressing Extrinsic Defects in Ultrathin SiON Gate Insulator of Advanced Complementary Metal–Oxide–Semiconductor Field-Effect Transistors

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